billwanhua
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China's First 28nm Lithography Tool to Be Delivered This Year
China's most advanced domestic scanner.
193nm immersion scanners can natively create 36nm with no multi-patterning tricks, with multi-patterning you can halve that (Known as pitch doubling, or even pitch quad, or any of various multiple industry terms), single application of this will enable print size of ≈18nm at the expense of additional processing steps (that come with added defects and error propagation). if you apply multipattern multiple times you can achieve sub 10nm. Not sure anyone has done more than a 2x cycle of this as it is quite cost prohibitive and errors multiply. I expect this scanner is only able to achieve 28nm class performance with multi-patterning or they are twisting logic and printing 36nm lines and calling it 28nm class.
If you want to know how good US semi fabs got at patterning, look at 2D Planar fab shrinkage which was actually accurate on marketing, IE true resolution unlike the current TSMC/Intel/Samsung Logic marketing terms. For NAND it was continously verified by actual chip teardowns/deprocessing.
2D NAND ran in to scaling issue, hence the change to stacking/3D. Any tech becomes more costly to go smaller (multiple patterning tricks vs EUV) and NAND memory cells degrade as you go smaller, playing with smaller number of electrons leading to less cycles before failure with each subsequent shrink. Hence all NAND players transitioned to 3D stacking after they got as much performance as possible from the 14-16nm range.
28nm可以刻sub 10nm ,应该相当于荷兰duv
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